New Greenliant NVMe U.2 EnduroSLC Industrial Enterprise EX Series offers high performance and ultra high endurance

Greenliant is now sampling its NVMe U.2 EnduroSLC Industrial Enterprise EX Series solid state drives (SSDs) to customers that require ultra high endurance primary storage with sustainable low latency and high performance in extreme environments. 

Designed with Greenliant’s EnduroSLC Technology, NVMe U.2 Industrial Enterprise EX Series SSDs provide ultra robust data retention and ultra high system-level lifetime endurance of 30 drive writes per day (DWPD) for five years.

The NVMe U.2 EnduroSLC Industrial Enterprise SSDs with 1-bit-per-cell (SLC) NAND includes ultra high endurance that reaches 30 DWPD for five years; delivers high capacity offered from 800 GB to 1.92 TB; with high performance that reaches up to 2,600/1,900 MB/s read/write. 

It also offers on-chip adaptive RAID that improves SSD reliability; power interrupt data protection that helps prevent data corruption during power failures; industrial temperature that operates between -40 and +85 degrees celsius, and data security functionality that supports AES 256-bit encryption and crypto erase.

“For the highest levels of data integrity, Greenliant’s NVMe U.2 Industrial Enterprise SSDs implement on-chip adaptive RAID,” said Xuanhui Li, vice president of business development, Datacenter Products, Greenliant. “With Greenliant’s NVMe U.2 Industrial Enterprise SSDs, customers can achieve the efficiency and scalability required to meet the demands of write intensive applications in harsh environments.”

Greenliant is sampling its new G7200 Industrial Enterprise EX Series SSDs to customers now, and expects to start shipping in volume production by end of 2019. Greenliant also plans to ship its 3-bit-per-cell (3D TLC NAND) Enterprise PX Series SSDs in capacities from 960 GB to 3.84 TB in the first quarter of this year. 

Samsung secures global recognition for environmental sustainability of its semiconductor offerings

Samsung Electronics announced that its 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) 3.0 will be awarded Carbon Footprint and Water Footprint Certifications from UK-based Carbon Trust. 

Samsung’s 512GB eUFS 3.0 is initial mobile memory in the industry to be recognized by an international certifying organization, which was made possible through the company’s extensive efforts to reduce carbon and water footprints.

The Carbon Trust is a globally accredited non-profit certification body established by the British government to accelerate the move to a sustainable, low-carbon economy. Each certification by the Carbon Trust was made after a thorough assessment of the environmental impact of carbon emissions and water usage before and throughout the production cycle, based on international standards.

Based on the company’s fifth-generation (90+ layers) V-NAND, Samsung’s 512GB eUFS 3.0 provides optimal speed, power efficiency and productivity to deliver twice the capacity and 2.1 times the sequential speed of its fourth generation (64 layers) V-NAND-based 256GB eUFS 2.1, while requiring 30 percent less operating voltage. 

Samsung’s 512GB eUFS 3.0 stacks eight of the company’s fifth-generation 512-gigabit (Gb) V-NAND die and integrates a high-performance controller. At 2,100 megabytes-per-second (MB/s), the new eUFS doubles the sequential read rate of Samsung’s latest eUFS memory (eUFS 2.1) which was announced in January this year. 

The offering’s blazing read speed is four times faster than that of a SATA solid state drive (SSDs) and 20 times faster than a typical microSD card, allowing premium smartphones to transfer a full HD movie to a PC in about three seconds. In addition, the sequential write speed also has been improved by 50 percent to 410MB/s, which is equivalent to that of a SATA SSD.

Additionally, Samsung’s fifth-generation V-NAND utilizes a unique etching technology that pierces more than 90 cell layers in a single precise step. This allows the chip to have nearly 1.5 times more stacked layers than the previous generation and accommodate a 25-percent reduction in chip size. Such innovations help to minimize the overall increase in carbon and water footprints for each V-NAND cell layer.

Samsung is also being awarded Environmental Product Declaration (EPD) labels for its ‘1-terabyte (TB) eUFS 2.1’ and its ‘fifth-generation 512-gigabit (Gb) V-NAND’ by the Korean Ministry of Environment.

Samsung plans to actively expand the adoption of its highly sustainable, high-capacity premium memory solutions into many more flagship smartphones and further strengthen global partnerships for its next-generation memory technologies.

“We are extremely pleased that our cutting-edge memory technologies not only demonstrate our capability to overcome more challenging process complexities, but also are recognized for their environmental sustainability,” said Chanhoon Park, executive vice president and head of Giheung Hwaseong Pyeongtaek Complex at Samsung Electronics. “Samsung will continue to create memory solutions that provide the highest levels of speed, capacity and power efficiency at extremely small geometries for end-users worldwide.”

KIOXIA’s PCIe 4.0 enterprise NVMe SSDs strengthens storage performance; achieves PCI-SIG compliance and NVMe certification

KIOXIA America Inc. (formerly Toshiba Memory America, Inc.), the U.S.-based subsidiary of KIOXIA Corp., announced Wednesday that its lineup of PCIe 4.0 NVMe enterprise solid state drives (SSDs) has achieved PCI-SIG compliance for PCIe 4.0 and University of New Hampshire InterOperability Laboratory (UNH-IOL) certification. 

KIOXIA’s CM6 Series passed interoperability tests at the August 2019 PCI-SIG Compliance Workshop – that includes official PCIe 4.0 specification tests. KIOXIA America will be on hand at Supercomputing 2019 later this month to showcase new levels of flash performance enabled by its CM6 Series SSDs. 

KIOXIA develops PCIe 4.0 NVM Express SSDs and continues to push the limits of flash storage performance. The CM6 Series brings planned performance improvements of three times over its PCIe 3.0 predecessors and is 12 times faster than SATA drives. KIOXIA’s lineup of Gen4 PCIe SSDs also includes the CD6 Series, which is targeted to cloud and scale-out environments.

The PCIe 4.0 NVMe enterprise SSDs utilizes KIOXIA’s 96-layer BiCS FLASH 3D flash memory, PCIe 2x2 or 1x4 lane configuration options, targeted transfer rates up to 6,900 megabytes per second; and supports SFF-TA-1001 (also known as U.3) operation with universal backplanes for simplified customer use with SAS, SATA and NVMe SSDs.

KIOXIA was at Microsoft Ignite earlier this month to demonstrate the CM6 Series running in a Microsoft Azure hyperconverged infrastructure (HCI) platform with Quanta Cloud Technologies – and enabling twice performance gains over a PCIe 3.0 solution. 

“We were able to show that our CM6 Series SSDs are capable of pushing SSD sequential read performance to over 55 gigabytes per second (GB/s) across eight drives – nearly 7GB/s per SSD – and we’re not done yet. KIOXIA will continue to push the performance envelope for our customers,” noted Alvaro Toledo, vice president of SSD marketing and product planning for KIOXIA America.

PCI-SIG hosts Compliance Workshops several times a year in various locations worldwide, giving members the opportunity to test and validate their products before entering the field. Compliance testing is completed against both PCI-SIG maintained systems and other manufacturers of PCI products. 

As the key testing and certification lab for NVMe technology and software, the UNH-IOL provides conformance and interoperability testing across various operating systems, drivers, and hardware platforms, as well as PCIe SSDs and PCIe-enabled servers. “The SSD market is quickly moving to NVM Express technology, and standards compliance is critical to ensure smooth adoption,” added Toledo.

ATP A600Si/A600Sc SATA SSDs deliver MCU design for enhanced power management and PLP capabilities

ATP Electronics unveiled Tuesday its next-generation A600Si and A600Sc Serial ATA solid state drives (SATA SSDs) featuring a completely new design of the power loss protection (PLP) array, which utilizes a new power management IC (PMIC) and new firmware-programmable MCU (microcontroller unit). 

Integrated into its latest PLP technology, ATP PowerProtector 4, the new MCU design allows the PLP array to perform intelligently in various temperatures, power glitches and charge states.

ATP SATA SSDs with the new PowerProtector 4 MCU-based design provide enhanced device protection that suppresses power-up inrush current according to customer request and input over-voltage protection to prevent damage to the SSD circuitry. It delivers improved data integrity using input power noise de-glitch to prevent incorrect cache flushing caused by false triggers such as noisy or unstable host input voltage, and under-charge/over-charge protection for hold-up power capacitors.

It also provides fast power on/off control that cuts time required from power-off to re-power on the SSD;  precise control of reset signal generation and power up/down sequences prevents potential issues in the power up/down of the SSD; and industrial operating temperature support ensures reliable operation in extreme environments from ‑40°C to 85°C. 

As components perform and react differently in severely cold or hot scenarios, ATP PowerProtector 4 ensures reliable PLP capacitance in all states of cold start, hot temperature workload, and cross temperature.

With this line of SSDs, users get access to RAID support that ensures redundancy and fault tolerance to prevent data loss in the event of a drive failure; end-to-end data protection prevents unauthorized access to data while it is being transferred from one storage device to another; and customization options, as the new MCU-based design allows PLP capabilities to be tailor-fitted according to unique customer requirements, application-specific needs, or use cases.

"Superior power loss protection is essential in any embedded/industrial application. But not all PLPs are equal," said Marco Mezger, ATP vice president of global marketing. "By implementing this type of MCU design, we are able to showcase our engineering expertise and nearly 30-year experience in the design and manufacture of storage devices for wide temperature environments, particularly for compact form factors in embedded/industrial applications. We continue to blaze the trail, as we were also the first to design and release smaller form factor SSDs such as eUSB and M.2 2242 with an onboard PLP array."

The next-generation ATP SATA SSDs with the new MCU-based design include mSATA, 2.5-inch SSDs and M.2 2242/2280 modules. Available with I-Temp (A600Si) and C-Temp (A600Sc) support, the SSDs come in the following capacities — M.2 2280: 120 to 960 GB; M.2 2242 and mSATA: 120 to 480 GB; 2.5": 120 GB to 1.92 TB.